Referenced in: none

Automatically associated channels: Slo1

Title: Nanostructured silicon based thin film transistors processed in the plasma dark region.

Authors: L Pereira, H Aguas, L Gomes, P Barquinha, E Fortunato, R Martins

Journal, date & volume: J Nanosci Nanotechnol, 2010 Apr , 10, 2938-43

PubMed link: http://www.ncbi.nlm.nih.gov/pubmed/20355528

Abstract
Nanostructured silicon (na-Si:H) thin films were fabricated using plasma enhanced chemical vapour deposition (PECVD) technique under high silane hydrogen dilution and a discharge frequency of 27 MHz, where the substrate was located in the dark region of the plasma, protected by a grounded metal grid. By not exposing the growth surface directly to the plasma we avoid the silicon growth surface to sustain a high ion bombardment leading to a less defective surface and highly compact films. The intrinsic films grown under these conditions were used to produce the channel region of thin film transistors (TFTs) with a bottom gate staggered configuration, integrating different dielectric layers. The devices produced exhibit a field effect mobility close to 1.84 cm2 V(-1) s(-1), threshold voltage around 2 V, on/off ratio above 10(7) and sub-threshold slope below 0.5 V/decade, depending on the dielectric used.