Referenced in: none

Automatically associated channels: Slo1

Title: Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals.

Authors: Chen Wei Shih, Albert Chin, Chun Fu Lu, Wei Fang Su

Journal, date & volume: Sci Rep, 2016 , 6, 19023

PubMed link: http://www.ncbi.nlm.nih.gov/pubmed/26744240

Abstract
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.